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Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot

The bipolar effect of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (

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A method is presented for fabricating a light emitting diode (LED) device with a stratified quantum dot (QD) structure. The method provides an LED and

TiO2 quantum dots as superb compact block layers for high-

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On Nov 30, 2013 Shiang Feng Tang (and others) published: High temperature operation In(Ga)As quantum dot infrared photodetector focal plane arrays

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Hybrid remote quantum dot/powder phosphor designs for display

FULL TEXT Abstract: Quantum dots are ideally suited for color conversion in light emitting diodes owing to their spectral tunability, high conversion

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A quantum dot infrared detector includes a quantum dot-stacked structure in which quantum dot layers each containing quantum dots stacked on top of one

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An exemplary quantum dot device can be provided, which can include, for example, at least three conductive layers and at least two insulating layers

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Abstract This work presents hybrid quantum dot light-emitting diodes with double emission layers. Blue quantum dots were deposited by spin-coating

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CO2 hydrogenation over Cu/Al2O3 catalysts at high pressure

Al2O3 (5 wt% Ba/95 wt% Cu/Al2O3) or A high pressure thermal mass flow controller (Furthermore, Ai studied the impact of alkali and

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layers for high-performance CH3NH3PbI3 perovskite(2) quantum dots (QDs) with an average (PCE) of 5.5% under standard AM 1.5 solar

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US Patent Application for QUANTUM DOT PHOTODETECTOR APPARATUS

and a layer of quantum dot material configured where A is CH3NH3 or NH2CH═NH2, B is Pb5-naphthalenediamine; 9,10-dimethylanthracene; 9,

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